Reemergence of the surface-potential-based compact MOSFET models
- 22 March 2004
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 36.1.1-36.1.4
- https://doi.org/10.1109/iedm.2003.1269415
Abstract
This paper addresses current issues in compact MOSFET modeling, provides an overview and some essential details of SP (a new compact MOSFET model developed at Penn State), and presents original results concerning new applications of the symmetric linearization method and streamlined surface potential (/spl phi//sub s/) approximation.Keywords
This publication has 11 references indexed in Scilit:
- Accuracy of approximations in MOSFET charge modelsIEEE Transactions on Electron Devices, 2002
- Symmetric bulk charge linearisationin charge-sheet MOSFET modelElectronics Letters, 2001
- Simulation of nanoscale MOSFETs: a scattering theory interpretationSuperlattices and Microstructures, 2000
- An improved MOSFET model for circuit simulationIEEE Transactions on Electron Devices, 1998
- PCIM: a physically based continuous short-channel IGFET model for circuit simulationIEEE Transactions on Electron Devices, 1994
- Characterization and modeling of the n- and p-channel MOSFETs inversion-layer mobility in the range 25–125°CSolid-State Electronics, 1994
- A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistorsIEEE Transactions on Electron Devices, 1990
- A parametric short-channel MOS transistor model for subthreshold and strong inversion currentIEEE Journal of Solid-State Circuits, 1984
- A charge-sheet model of the MOSFETSolid-State Electronics, 1978
- Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistorsSolid-State Electronics, 1966