A parametric short-channel MOS transistor model for subthreshold and strong inversion current
- 1 February 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 19 (1) , 100-112
- https://doi.org/10.1109/jssc.1984.1052093
Abstract
The authors present a parametric model which covers the subthreshold and strong inversion regions with a continuous transition between these regions. The effects included in the model are mobility reduction, carrier velocity saturation, body effect, source-drain resistance, drain-induced barrier lowering, and channel-length modulation. The model simulates accurately the current characteristics as well as the transconductance and output conductance characteristics which are important for analog circuit simulation.Keywords
This publication has 17 references indexed in Scilit:
- A small geometry MOSFET model for CAD applicationsSolid-State Electronics, 1983
- Small-signal MOSFET models for analog circuit designIEEE Journal of Solid-State Circuits, 1982
- Two-dimensional dynamic analysis of short-channel thin-film MOS transistors using a minicomputerIEEE Transactions on Electron Devices, 1982
- Output characteristics of short-channel field-effect transistorsIEEE Transactions on Electron Devices, 1981
- Measurement of the high-field drift velocity of electrons in inversion layers on siliconIEEE Electron Device Letters, 1981
- Velocity of surface carriers in inversion layers on siliconSolid-State Electronics, 1980
- Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperatureIEEE Transactions on Electron Devices, 1975
- Fundamental performance limits of MOS integrated circuitsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1975
- Current/voltage characteristics, channel pinchoff and field dependence of carrier velocity in silicon insulated-gate field-effect transistorsElectronics Letters, 1970
- Conductance of MOS transistors in saturationIEEE Transactions on Electron Devices, 1969