DC and RF characteristics of double recessed anddouble pulse doped AlInAs/GaInAs/InP HEMTs
- 19 January 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (2) , 135-136
- https://doi.org/10.1049/el:19950063
Abstract
The effects of gate recess etch profiles on DC and RF characteristics of passivated, double pulse doped AlInAs/GaInAs/InP HEMTs were investigated. On-wafer characterisation has revealed that double recessed devices have higher breakdown voltage, lower output conductance, input capacitance, and feedback capacitance compared to conventional single recessed devices.Keywords
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