Continuous wave operation of 1.26 µm GaInNAs/GaAsvertical-cavity surface-emittinglasers grown by metalorganic chemical vapour deposition
- 23 November 2000
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 36 (24) , 2018-2019
- https://doi.org/10.1049/el:20001430
Abstract
Electrically pumped near 1.3 µm GaInNAs/GaAs vertical-cavity surface-emitting lasers grown by metalorganic chemical vapour deposition are demonstrated for the first time. The threshold current and voltage under continuous wave operation of a 10 × 10 µm2 oxide aperture device were 7.6 mA and 2.8 V, respectively. The output power exceeded 0.1 mW and the slope efficiency was ~0.1 W/A.Keywords
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