(GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser with ultrabroad temperature operation range

This publication has 12 references indexed in Scilit:

• Ultrafast (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser for the 1.3 μm wavelength regime
  Applied Physics Letters, 1999
• Reduced threshold current densities of (GaIn)(NAs)/GaAssingle quantum welllasers for emission wavelengths in the range 1.28 – 1.38 µm
  Electronics Letters, 1999
• Investigations of (GaIn)(NAs) bulk layers and (GaIn)(NAs)/GaAs multiple quantum well structures grown using tertiarybutylarsine (TBAs) and 1,1-dimethylhydrazine (UDMHy)
  Journal of Crystal Growth, 1998
• 1.3-μm continuous-wave lasing operation in GaInNAs quantum-well lasers
  IEEE Photonics Technology Letters, 1998
• GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laser diodes
  IEEE Photonics Technology Letters, 1998
• Room-temperature pulsed operationof 1.3 µm GaInNAs/GaAs laser diode
  Electronics Letters, 1997
• Low-temperature optimized vertical-cavity lasers with submilliamp threshold currents over the 77-370 K temperature range
  IEEE Photonics Technology Letters, 1997
• Room-Temperature Pulsed Operation of GaInNAs Laser Diodes with Excellent High-Temperature Performance
  Japanese Journal of Applied Physics, 1996
• Cryogenic VCSELs with chirped multiple quantum wells for a very wide temperature range of CW operation
  IEEE Photonics Technology Letters, 1996
• Cryogenic operation of AlGaAs-GaAs vertical-cavity surface-emitting lasers at temperatures from 200 K to 6 K
  IEEE Photonics Technology Letters, 1996