Formation of a shallow p+ layer on InP using a P/Be co-implant
- 21 December 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (25) , 2127-2129
- https://doi.org/10.1063/1.98968
Abstract
A novel p‐type implantation using a co‐implant of phosphorus and beryllium to produce a shallow p+ surface layer is reported. The results from electrical measurement show an excellent control of the carrier profile. There is no Be in‐diffusion observed and an improvement of the electrical activation also resulted.Keywords
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