Removal of the high-resistivity layer at the n on n+ liquid phase epitaxial GaAs layer-substrate interface by controlled i n s i t u etch-back

Publisher Website
Google Scholar
Abstract
A high‐resistivity layer often forms at the gallium arsenide layer‐substrate interface following preepitaxial growth heat treatment and subsequent layer growth. An in situ etch‐back technique was developed for use on the substrate which resulted in the removal of the high‐resistivity interfacial layer. This simple technique yielded reproducible etch‐back versus time control and thus controllable removal of the high‐resistivity layer.