Dependence of radiation induced buried oxide charge on silicon-on-insulator fabrication technology
- 1 December 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 43 (6) , 2639-2645
- https://doi.org/10.1109/23.556847
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Photocurrent Measurements of Electron Traps in SimoxPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Thickness increment of buried oxide in a SIMOX wafer by high-temperature oxidationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Confinement Phenomena in Buried Oxides of SIMOX Structures as Affected by ProcessingJournal of the Electrochemical Society, 1996
- Trapping-detrapping properties of irradiated ultra-thin SIMOX buried oxidesIEEE Transactions on Nuclear Science, 1995
- Capture cross-section of hole traps in reoxidized nitrided oxide measured by irradiationSolid-State Electronics, 1995
- The use of spectroscopic ellipsometry to predict the radiation response of SIMOXIEEE Transactions on Nuclear Science, 1994
- Saturation of Threshold Voltage Shift in MOSFET's at High Total DoseIEEE Transactions on Nuclear Science, 1986
- Comparison of 60Co Response and 10 KeV X-Ray Response in MOS CapacitorsIEEE Transactions on Nuclear Science, 1983
- Avalanche Injection of Holes into SiO2IEEE Transactions on Nuclear Science, 1977
- AVALANCHE INJECTION CURRENTS AND CHARGING PHENOMENA IN THERMAL SiO2Applied Physics Letters, 1969