Hydrogen Induced Si Surface Segregation on Ge-Covered Si(001)
- 19 October 1998
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 81 (16) , 3467-3470
- https://doi.org/10.1103/physrevlett.81.3467
Abstract
Using Fourier transform infrared-attenuated total reflectance spectroscopy in conjunction with hydrogen adsorption to probe surface layer composition, we observe a reversible place exchange between Ge and Si on Ge-covered Si(001) when the surface is dosed with atomic H at elevated temperatures. First-principles calculations confirm a thermodynamic driving force for this place exchange. To explain the intriguing kinetics of the place exchange, which shows no time dependence, we propose a dimer-vacancy diffusion-assisted mechanism limited by vacancy interactions.Keywords
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