Electron diffusion lengths in liquid-phase epitaxial p-GaAs:Ge layers determined by electron-beam-induced current method
- 1 February 1982
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (2) , 1236-1237
- https://doi.org/10.1063/1.330536
Abstract
The electron diffusion lengths in liquid‐phase epitaxial (LPE) p‐GaAs:Ge layers were determined by using the electron‐beam‐induced current method. The electron diffusion length is found to reduce gradually as the doping level of the epitaxial layer is increased. For four LPE p‐GaAs:Ge layers with carrier concentration of 1.4×1016 cm−3, 2.0×1017 cm−3, 1.3×1018 cm−3, and 2.5×1019 cm−3, the electron diffusion lengths were determined to be 8.1, 6.7, 5.1, and 1.2 μm, respectively.This publication has 4 references indexed in Scilit:
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