Electron beam prepatterning for site control of self-assembled quantum dots
- 26 February 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 78 (10) , 1367-1369
- https://doi.org/10.1063/1.1351528
Abstract
A site-control technique for individual InAsquantum dots(QDs), formed by self-assembling has been developed, using scanning-electron-microscope assisted nanodeposition and metalorganic vapor phase epitaxy. We find that the nanoscale deposits, created at the focal point of the electron beam on a semiconductor surface, act as “nanogrowth masks”. Growth of a thin epitaxial layer produces nanoholes extending down to the deposits. The carbon deposits can be removed by oxygen plasma etching. When a compressively strained layer is deposited on this surface,QDs are self-organized at the hole sites, while no dots are observed in the flat surface region.Keywords
This publication has 10 references indexed in Scilit:
- Nucleation thermodynamics of quantum-dot formation in V-groove structuresPhysical Review B, 2000
- Site-controlled self-organization of individual InAs quantum dots by scanning tunneling probe-assisted nanolithographyApplied Physics Letters, 1999
- Effects of As/P exchange reaction on the formation of InAs/InP quantum dotsApplied Physics Letters, 1999
- Site control of self-organized InAs dots on GaAs substrates by in situ electron-beam lithography and molecular-beam epitaxyApplied Physics Letters, 1998
- Selective formation and alignment of InAs quantum dots over mesa stripes along the [011] and [001] directions on GaAs (100) substratesApplied Physics Letters, 1998
- Stress-engineered spatially selective self-assembly of strained InAs quantum dots on nonplanar patterned GaAs(001) substratesApplied Physics Letters, 1998
- Self-organized InAs islands on (100) InP by metalorganic vapor-phase epitaxySurface Science, 1997
- Assembling strained InAs islands on patterned GaAs substrates with chemical beam epitaxyApplied Physics Letters, 1996
- Alignment of InP Stranski–Krastanow dots by growth on patterned GaAs/GaInP surfacesApplied Physics Letters, 1996
- New scanning tunneling microscopy tip for measuring surface topographyJournal of Vacuum Science & Technology A, 1990