Compositional information from amorphous Si-Ge multilayers using high-resolution electron microscopy imaging and direct digital recording
- 31 December 1996
- journal article
- Published by Elsevier in Ultramicroscopy
- Vol. 66 (3-4) , 221-235
- https://doi.org/10.1016/s0304-3991(96)00093-9
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Energy‐filtered Fresnel contrast analysis of Fe/Cu multilayersJournal of Microscopy, 1995
- Low energy ion mixing in Si-Ge multilayer systemNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1994
- High-spatial-resolution analysis of Ge layers in SiUltramicroscopy, 1993
- Compositional and structural characterization of SixGe1−x alloys and heterostructures by high-resolution transmission electron microscopyUltramicroscopy, 1993
- Quantitative chemical lattice imaging: theory and practiceUltramicroscopy, 1990
- The measurement of the roughness of W/Si multilayers using the Fresnel methodUltramicroscopy, 1990
- The importance of beam alignment and crystal tilt in high resolution electron microscopyUltramicroscopy, 1983