High-performance double-recessed InAlAs/InGaAs power metamorphic HEMT on GaAs substrate
- 1 January 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters
- Vol. 9 (11) , 458-460
- https://doi.org/10.1109/75.808035
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- InAlAs/InGaAs metamorphic HEMT with high current density and high breakdown voltageIEEE Electron Device Letters, 1998
- High-performance, 0.1 μm InAlAs/InGaAs high electron mobility transistors on GaAsIEEE Electron Device Letters, 1996
- 20-GHz high-efficiency AlInAs-GaInAs on InP power HEMTIEEE Microwave and Guided Wave Letters, 1993
- A 0.1- mu m gate Al/sub 0.5/In/sub 0.5/As/Ga/sub 0.5/In/sub 0.5/As MODFET fabricated on GaAs substratesIEEE Transactions on Electron Devices, 1988
- Variation of the critical layer thickness with In content in strained InxGa1−xAs-GaAs quantum wells grown by molecular beam epitaxyApplied Physics Letters, 1987