20-GHz high-efficiency AlInAs-GaInAs on InP power HEMT
- 1 May 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters
- Vol. 3 (5) , 142-144
- https://doi.org/10.1109/75.217211
Abstract
A single-stage 20-GHz power amplifier was developed using a double-doped AlInAs-GaInAs-on-InP HEMT. Output power of 516 mW (0.645 W/mm) with power-added efficiency of 47.1% and 7.1-dB gain were obtained from an 800- mu m-wide device. The device had a saturated output power of more than 560 mW (0.7 W/mm). This is believed to be the highest combination of output power, power density, gain, and power-added efficiency reported for an InP-based FET at this frequency.Keywords
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