Photoemission Study of Oxygen Adsorbed on Sputtered a‐Si(H) and a‐Si
- 1 February 1982
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 109 (2) , 495-501
- https://doi.org/10.1002/pssb.2221090207
Abstract
The electronic structure of natural oxide layers and of oxygen adsorbed on the surface of sputtered a‐Si and a‐Si(H) thin films are investigated by combining ultraviolet photoemission spectroscopy and X‐ray photoemission spectroscopy. The emission structure in the valence band region which is derived from the oxygen and silicon orbitals, is found to represent the nondissociative adsorption of oxygen on a‐Si(H) surface independently of hydrogen content. XPS study of Si2s and Si2p core levels shows a minimally 0.3 eV smaller value of the chemical shift in the case of naturally oxidized a‐Si(H) and a‐Si films than the value measured on c‐Si oxidized under the same conditions. The ion‐beam effect on oxide layers is briefly discussed.Keywords
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