A high power and high efficiency monolithic power amplifier at V-band using pseudomorphic HEMTs
- 17 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
This paper presents a high power and high efficiency monolithic power amplifier at V-band utilizing highly reliable and manufacturable 0.15 /spl mu/m InGaAs/AlGaAs/GaAs pseudomorphic HEMT fabrication technology. The performance of the power amplifier is 13.83 dB small signal gain, 13.9% power-added-efficiency, and 26.83 dBm (482 mW) at 60 GHz for unpassivated HEMT process. The same circuit with passivated process produced a linear gain of 13.18 dB, 11% power-added-efficiency, and compressed output power of 25.68 dBm (370 mW). The producibility of this amplifier has been demonstrated in volume production with several wafer lots resulting in a 20% total yield through RF tests.<>Keywords
This publication has 5 references indexed in Scilit:
- Ka-band power PHEMT on-wafer characterization using prematched structuresPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A Ka-band HEMT MMIC 1 watt power amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Highpower 0.15-mm V-band pseudomorphic InGaAs-AlGaAs-GaAs HEMTIEEE Microwave and Guided Wave Letters, 1993
- V-band high-efficiency monolithic pseudomorphic HEMT power amplifiersIEEE Microwave and Guided Wave Letters, 1992
- High-power V-band pseudomorphic InGaAs HEMTIEEE Electron Device Letters, 1991