Quantitative XPS analysis of SiNx(:H) films using simple methods without sputtering
- 1 June 1992
- journal article
- Published by Wiley in Surface and Interface Analysis
- Vol. 19 (1-12) , 222-226
- https://doi.org/10.1002/sia.740190143
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- X-ray photoelectron spectroscopy investigation on the chemical structure of amorphous silicon nitride (a-SiNx)Journal of Vacuum Science & Technology A, 1989
- The effect of Ar+ sputtering on the x-ray photoelectron spectra of plasma-deposited silicon nitride filmsJournal of Applied Physics, 1989
- The formation of hydrogen passivated silicon single-crystal surfaces using ultraviolet cleaning and HF etchingJournal of Applied Physics, 1988
- XPS study of a-SixOy:H and a-SixNy:H thin filmsApplied Surface Science, 1988
- Data compilations: their use to improve measurement certainty in surface analysis by aes and xpsSurface and Interface Analysis, 1986
- The electronic properties of plasma-deposited films of hydrogenated amorphous SiNx (0<x<1.2)Journal of Applied Physics, 1986
- Influence of Deposition Temperature, Gas Pressure, Gas Phase Composition, and RF Frequency on Composition and Mechanical Stress of Plasma Silicon Nitride LayersJournal of the Electrochemical Society, 1985
- Electronic structure of hydrogenated and unhydrogenated amorphous: A photoemission studyPhysical Review B, 1984