Intermixing in GaAsSb/GaAs single quantum wells
- 1 October 1998
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 84 (7) , 4017-4019
- https://doi.org/10.1063/1.368583
Abstract
Photoluminescence coupled with repetitive thermal annealing has been used to study the interdiffusion process in a 10 nm GaAs 1−x Sb x / GaAs single quantum well. The diffusion equations and the Schrödinger equation were solved numerically to obtain the composition profile and the n=1 electron to heavy-hole transition energies in the intermixed quantum well, respectively. The intermixing process was shown to obey Fick’s second law.This publication has 12 references indexed in Scilit:
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