Thermal interdiffusion in InGaAs/GaAs and GaAsSb/GaAs strained quantum wells as a function of doping density
- 1 January 1991
- journal article
- research article
- Published by Springer Nature in Optical and Quantum Electronics
- Vol. 23 (7) , S975-S980
- https://doi.org/10.1007/bf00624986
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Thermal interdiffusion in InGaAs/GaAs strained quantum wells as a function of doping densitySuperlattices and Microstructures, 1991
- Optical characterization of thermal mixing in quantum wells and heterostructures using a Green’s function modelJournal of Applied Physics, 1991
- Thermal processing of strained GaInAs/GaAs high hole mobility transistor structuresApplied Physics Letters, 1990
- Superstrained superlattices: A processing approachJournal of Applied Physics, 1989
- Band lineups and deformation potentials in the model-solid theoryPhysical Review B, 1989
- Characterization of silicon ion-implantation damage in single-strained-layer (InGa)As/GaAs quantum wellsJournal of Electronic Materials, 1988
- Zinc-implantation-disordered (InGa)As/GaAs strained-layer superlattice diodesJournal of Applied Physics, 1986
- Disorder of an InxGa1−xAs-GaAs superlattice by Zn diffusionJournal of Applied Physics, 1983