Anodic oxidation of tantalum silicide
- 15 September 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (6) , 579-581
- https://doi.org/10.1063/1.96077
Abstract
Oxide films on cosputtered tantalum silicide have been formed by anodic oxidation. The films were characterized by Rutherford backscattering and nuclear microanalysis measurements yielding a composition consisting in a mixture of Ta2O5 and SiO2. The films show good quality insulating properties as determined by capacitance, electrical conductivity, and dielectric strength measurements. The results of this work are compared with those obtained by the thermal oxidation of tantalum silicide.Keywords
This publication has 17 references indexed in Scilit:
- Electrical properties of co-sputtered tantalum silicidesThin Solid Films, 1985
- Thermal oxidation of silicidesJournal of Applied Physics, 1984
- Thermal Oxidation of Transition Metal Silicides on Si: SummaryJournal of the Electrochemical Society, 1984
- Oxidation Phenomena of Polysilicon/Tungsten Silicide StructuresJournal of the Electrochemical Society, 1984
- Characteristics of TaSi2 / Poly ‐ Si Films Oxidized in Steam for VLSI ApplicationsJournal of the Electrochemical Society, 1983
- Refractory metal silicides: Thin-film properties and processing technologyIEEE Transactions on Electron Devices, 1983
- Interface effects in the formation of silicon oxide on metal silicide layers over silicon substratesJournal of Applied Physics, 1983
- Oxidation of silicide thin films: TiSi2Applied Physics Letters, 1983
- Kinetics of the thermal oxidation of WSi2Applied Physics Letters, 1979
- Repeated Removal of Thin Layers of Silicon by Anodic OxidationJournal of the Electrochemical Society, 1976