Thermal oxidation of silicides
- 1 October 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 56 (7) , 2127-2132
- https://doi.org/10.1063/1.334212
Abstract
Kinetics of thermal oxide growth on silicides MoSi2, WSi2, TaSi2, and TiSi2 deposited over polycrystalline and single-crystal silicon were investigated. Both steam and dry O2 oxidations in the temperature range of 750–1200 °C were examined. An oxidation kinetic model for silicides which accounts for diffusion processes of silicon through the silicide layer and oxidant through the growing oxide, and the interface chemical reaction was developed. This model uses the Deal–Grove silicon oxidation approach. The significantly larger linear rate constants and greatly reduced activation energies of the linear rate constants of silicides in relation to single-crystal silicon oxidations are predicted by this model. The similarity of parabolic rate constants and their activation energies for silicon oxidations is also in excellent agreement with the model.This publication has 18 references indexed in Scilit:
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