Thermal oxidation of tantalum silicide in O2 and H2O
- 15 December 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (12) , 1127-1129
- https://doi.org/10.1063/1.93424
Abstract
Thermal oxidation of TaSi2 in dry oxygen and steam has been investigated. 0.3‐μm‐thick films of tantalum silicide were deposited by cosputtering on high resistivity 〈111〉 silicon and oxidized silicon wafers. After a crystallization anneal in argon, the films were oxidized in dry O2 or steam at 1000 and 1100 °C. In all cases oxidation was observed. For TaSi2 deposited on Si, only the growth of SiO2 was observed, indicating that the Si diffused through TaSi2 before oxidation, and TaSi2 remained intact. In the case where TaSi2 was deposited on SiO2, it was actively involved in the oxidation process, resulting in the formation of SiO2 and Ta2O5.Keywords
This publication has 9 references indexed in Scilit:
- Oxidation of tantalum disilicide/polycrystalline silicon structures in dry O2Journal of Applied Physics, 1982
- Effect of scaling of interconnections on the time delay of VLSI circuitsIEEE Transactions on Electron Devices, 1982
- Comparison of the Properties of Molybdenum Silicide Films Deposited by D‐C Magnetron and RF Diode Co‐DepositionJournal of the Electrochemical Society, 1981
- Oxidation mechanisms in TiSi2 films on single silicon substratesApplied Physics Letters, 1980
- Oxidation of tantalum disilicide on polycrystalline siliconJournal of Applied Physics, 1980
- Kinetics of the thermal oxidation of WSi2Applied Physics Letters, 1979
- Oxidation of sputtered molybdenum silicide thin filmsApplied Physics Letters, 1978
- Oxidation mechanisms in WSi2 thin filmsApplied Physics Letters, 1978
- High-Temperature OxidationJournal of the Electrochemical Society, 1965