Isomerization model for photo-induced effects in a-Si:H
- 1 November 1984
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 68 (2) , 167-174
- https://doi.org/10.1016/0022-3093(84)90001-2
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Energy distribution of light-induced gap states in hydrogenated amorphous-silicon alloysPhysical Review B, 1984
- Origin of the photo-induced changes in hydrogenated amorphous siliconSolar Cells, 1983
- Theoretical models for the electronic structures of hydrogenated amorphous silicon. II. Three-center bondsPhysical Review B, 1982
- Observation of photoinduced changes in the bulk density of gap states in hydrogenated amorphous siliconApplied Physics Letters, 1982
- Deep electron traps in hydrogenated amorphous siliconPhysical Review B, 1981
- Light-induced dangling bonds in hydrogenated amorphous siliconApplied Physics Letters, 1981
- Investigation of the hydrogen and impurity contents of amorphous silicon by secondary ion mass spectrometrySolar Cells, 1980
- Optically induced conductivity changes in discharge-produced hydrogenated amorphous siliconJournal of Applied Physics, 1980
- Defects in amorphous semiconductorsJournal of Non-Crystalline Solids, 1980
- Density of States in the Gap of Tetrahedrally Bonded Amorphous SemiconductorsPhysical Review Letters, 1978