Determination of the small-signal parameters of an AlGaAs/GaAs MODFET

This publication has 13 references indexed in Scilit:

• The Deformable-Channel Model--A New Approach to High-Frequency MESFET Modeling
  IEEE Transactions on Microwave Theory and Techniques, 1987
• Analysis of MODFET microwave characteristics
  IEEE Transactions on Electron Devices, 1987
• Classical versus quantum mechanical calculation of the electron distribution at the n-AlGaAs/GaAs heterointerface
  IEEE Transactions on Electron Devices, 1986
• DC and microwave models for Al_xGa_1-xAs/GaAs high electron mobility transistors
  IEEE Transactions on Electron Devices, 1984
• Subbands and charge control in a two-dimensional electron gas field-effect transistor
  Applied Physics Letters, 1984
• Electron density of the two-dimensional electron gas in modulation doped layers
  Journal of Applied Physics, 1983
• Current—Voltage and capacitance—Voltage characteristics of modulation-doped field-effect transistors
  IEEE Transactions on Electron Devices, 1983
• Signal and Noise Properties of Gallium Arsenide Microwave Field-Effect Transistors
  Published by Elsevier ,1975
• General theory for pinched operation of the junction-gate FET
  Solid-State Electronics, 1969
• Small-signal, high-frequency theory of field-effect transistors
  IEEE Transactions on Electron Devices, 1964