Thermal oxidation of silicon studied by high resolution Rutherford backscattering
- 1 March 1979
- journal article
- research article
- Published by Springer Nature in Journal of Radioanalytical and Nuclear Chemistry
- Vol. 48 (1-2) , 277-286
- https://doi.org/10.1007/bf02519792
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Rutherford Backscattering Analysis with Very High Depth Resolution Using an Electrostatic Analysing SystemPublished by Springer Nature ,1976
- Influence of an Oxidizing Annealing Ambient on the Distribution of As, Sb, and Ga Implanted into SiliconJournal of the Electrochemical Society, 1975
- The optimization of a rutherford backscattering geometry for enhanced depth resolutionNuclear Instruments and Methods, 1975
- Principles and applications of ion beam techniques for the analysis of solids and thin filmsThin Solid Films, 1973
- Thermal Oxidation of Silicon after Ion ImplantationJournal of the Electrochemical Society, 1973
- An application of high energy-resolution scattering measurements in channeling studiesRadiation Effects, 1972