Chemical bonding analysis of a-SiC : H films by Raman spectroscopy
- 1 March 1994
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 169 (1-2) , 37-46
- https://doi.org/10.1016/0022-3093(94)90222-4
Abstract
No abstract availableKeywords
This publication has 29 references indexed in Scilit:
- AES microstructural investigations of low-temperature, low-frequency plasma-deposited a-SixC1−x:H filmsApplied Surface Science, 1993
- Structural and optical properties of hydrogenated amorphous silicon carbide deposited by glow discharge from C3H8-SiH4-H2 mixtureJournal of Applied Physics, 1992
- A study of the effect of composition on the microstructural evolution of a–SixC1−x: H PECVD films: IR absorption and XPS characterizationsJournal of Materials Research, 1992
- Bonding properties of glow-discharge polycrystalline and amorphous Si-C films studied by x-ray diffraction and x-ray photoelectron spectroscopyJournal of Applied Physics, 1992
- Structural properties of amorphous SiC films and x-ray membranes by EXAFSMicroelectronic Engineering, 1992
- Structure of hydrogenated amorphous silicon-carbon alloys as investigated by extended x-ray-absorption fine structurePhysical Review B, 1992
- Comparative study of decomposition by metal-organic chemical vapour deposition of tetraethylsilane and tetravinylsilaneJournal of Materials Chemistry, 1992
- Structural study of a-Si1-xCx:H by exafs and x-ray scatteringJournal of Non-Crystalline Solids, 1991
- Structure and properties of amorphous hydrogenated silicon carbidePhysical Review B, 1987
- Direct evidence for homonuclear bonds in amorphous SiCSolid State Communications, 1974