Pulsed electron beam induced recrystallization and damage in GaAs
- 1 December 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (11) , 867-869
- https://doi.org/10.1063/1.90987
Abstract
Single‐pulse electron‐beam irradiations of 300‐keV 1015Kr+/cm2 or 300‐keV 3×1012 Se+/cm2 implanted layers in unencapsulated 〈100〉 GaAs are studied as a function of the electron beam fluence. The electron beam pulse had a mean electron energy of ≃20 keV and a time duration of ?10−7 s. Analyses by means of MeV He+ channeling and TEM show the existence of narrow fluence window (0.4–0.7 J/cm2) within which amorphous layers can be sucessfully recrystallized, presumably in the liquid phase regime. Too high a fluence produces extensive deep damage and loss of As.Keywords
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