Optimization of gate oxide N/sub 2/O anneal for CMOSFET's at room and cryogenic temperatures

This publication has 40 references indexed in Scilit:

• Understanding of the temperature dependence of channel hot-carrier degradation in the range 77 K to 300 K
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
• MOS characteristics of NH/sub 3/-nitrided N/sub 2/O-grown oxides
  IEEE Electron Device Letters, 1993
• Improved hot-carrier immunity in CMOS analog device with N/sub 2/O-nitrided gate oxides
  IEEE Electron Device Letters, 1992
• Excellent immunity of GIDL to hot-electron stress in reoxidized nitrided gate oxide MOSFET's
  IEEE Electron Device Letters, 1992
• Improved reliability characteristics of submicrometer nMOSFETs with oxynitride gate dielectric prepared by rapid thermal oxidation in N/sub 2/O
  IEEE Electron Device Letters, 1991
• Channel hot-carrier stressing of reoxidized nitrided oxide p-MOSFETs
  IEEE Transactions on Electron Devices, 1991
• Hot-carrier-induced interface state generation in submicrometer reoxidized nitrided oxide transistors stressed at 77 K
  IEEE Transactions on Electron Devices, 1991
• Channel hot-carrier stressing of reoxidized nitrided silicon dioxide
  IEEE Transactions on Electron Devices, 1990
• Analysis of an ONO gate film effect on n- and p-MOSFET mobilities
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1990
• Silicon Impurity Distribution as Revealed by Pulsed MOS C-V Measurements
  Journal of the Electrochemical Society, 1971