A new rotating-boat technique for liquid phase epitaxial growth of gallium arsenide
- 31 March 1973
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 18 (3) , 212-216
- https://doi.org/10.1016/0022-0248(73)90163-2
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- A new technique for liquid phase epitaxyJournal of Crystal Growth, 1970
- High peak-power LSA operation from epitaxial GaAsIEEE Transactions on Electron Devices, 1970
- JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATUREApplied Physics Letters, 1970
- Liquid-phase epitaxial growth of gallium arsenide under transient thermal conditionsJournal of Crystal Growth, 1970
- Constitutional supercooling in GaAs liquid phase epitaxyJournal of Crystal Growth, 1970
- Theoretical analysis of requirements for crystal growth from solutionJournal of Crystal Growth, 1968
- PREPARATION AND PROPERTIES OF HIGH-PURITY EPITAXIAL GaAs GROWN FROM Ga SOLUTIONApplied Physics Letters, 1967