Deep states in nitrogen-doped p-ZnSe
- 1 March 1998
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 83 (5) , 2563-2567
- https://doi.org/10.1063/1.367017
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
- Effects of thermal annealing on properties of p-type ZnSe grown by MOVPEMaterials Science and Engineering: B, 1997
- Effects of annealing atmosphere and temperature on acceptor activation in ZnSe:N grown by photoassisted MOVPEJournal of Crystal Growth, 1996
- Growth of P-type Znse by metalorganic molecular beam epitaxy using metal Zn and dimethylselenideJournal of Electronic Materials, 1996
- Thermal annealing effects on p-type conductivity of nitrogendoped ZnSe grown by metalorganic vapor phase epitaxyJournal of Electronic Materials, 1995
- p-type ZnSe grown by molecular beam epitaxy with remote microwave plasma of N2Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
- Novel technique for p-type nitrogen doped ZnSe epitaxial layersApplied Physics Letters, 1993
- Blue-green injection laser diodes in (Zn,Cd)Se/ZnSe quantum wellsApplied Physics Letters, 1991
- Blue-green laser diodesApplied Physics Letters, 1991
- Characteristics of p-type ZnSe Layers Grown by Molecular Beam Epitaxy with Radical DopingJapanese Journal of Applied Physics, 1991
- p-type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growthApplied Physics Letters, 1990