Theory of valence subbands in GaAs heterostructures
- 3 August 1986
- journal article
- Published by Elsevier in Surface Science
- Vol. 174 (1-3) , 105-110
- https://doi.org/10.1016/0039-6028(86)90394-8
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Self-consistent calculations of electric subbands in p-type GaAlAs-GaAs heterojunctionsSuperlattices and Microstructures, 1985
- Holes at GaAs-As heterojunctions in magnetic fieldsPhysical Review B, 1985
- Optical properties in modulation-doped GaAs-As quantum wellsPhysical Review B, 1985
- Hole Subband at GaAs/AlGaAs Heterojunctions and Quantum WellsJournal of the Physics Society Japan, 1985
- Effect of Inversion Symmetry on the Band Structure of Semiconductor HeterostructuresPhysical Review Letters, 1984
- Calculation of hole subbands at the GaAs-interfacePhysical Review B, 1984
- Lifting of the Spin Degeneracy of Hole Subbands in a Surface Electric Field on SiliconPhysical Review Letters, 1984
- Energy Structure and Quantized Hall Effect of Two-Dimensional HolesPhysical Review Letters, 1983
- Hartree Approximation for the Electronic Structure of ap-Channel Inversion Layer of Silicon M. O. S.Progress of Theoretical Physics Supplement, 1975
- Quantum Theory of Cyclotron Resonance in Semiconductors: General TheoryPhysical Review B, 1956