LEED intensity and surface core level shift analysis of the MBE-prepared surface
- 15 May 1998
- journal article
- Published by Elsevier in Surface Science
- Vol. 402-404, 782-785
- https://doi.org/10.1016/s0039-6028(97)01060-1
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- GaAs equilibrium crystal shape from first principlesPhysical Review B, 1996
- Semiconductor Surface Reconstruction: The Structural Chemistry of Two-Dimensional Surface CompoundsChemical Reviews, 1996
- Reflection high energy electron diffraction measurements of molecular beam epitaxially grown GaAs and InGaAs on GaAs(111)Thin Solid Films, 1993
- {111} Surfaces of Compounds with Zincblende StructurePublished by Springer Nature ,1993
- High-resolution synchrotron-radiation core-level spectroscopy of decapped GaAs(100) surfacesPhysical Review B, 1991
- Reconstructions of GaAs(1¯ 1¯ 1¯) surfaces observed by scanning tunneling microscopyPhysical Review Letters, 1990
- Quantitative analysis of synchrotron radiation photoemission core level dataJournal of Electron Spectroscopy and Related Phenomena, 1989
- Electron counting model and its application to island structures on molecular-beam epitaxy grown GaAs(001) and ZnSe(001)Physical Review B, 1989
- Ab initiotheory of polar semiconductor surfaces. II. (22) reconstructions and related phase transitions of GaAs(1¯1¯1¯)Physical Review B, 1987
- Theory of polar semiconductor surfacesJournal of Vacuum Science and Technology, 1979