Depth and thermal stability of dry etch damage in GaN Schottky diodes
- 12 July 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (2) , 232-234
- https://doi.org/10.1063/1.124332
Abstract
GaN Schottky diodes were exposed to N2 or H2 inductively coupled plasmas prior to deposition of the rectifying contact. Subsequent annealing, wet photochemical etching, or (NH4)2S surface passivation treatments were examined for their effect on diode current–voltage (I–V) characteristics. We found that either annealing at 750 °C under N2, or removal of ∼500–600 Å of the surface essentially restored the initial I–V characteristics. There was no measurable improvement in the plasma-exposed diode behavior with (NH4)2S treatments.This publication has 13 references indexed in Scilit:
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