Probing atomically inhomogeneous surfaces with tunneling microscopy
- 2 March 1990
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 48 (1-4) , 296-305
- https://doi.org/10.1016/0168-583x(90)90126-f
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- Origins of stress on elemental and chemisorbed semiconductor surfacesPhysical Review Letters, 1989
- Stability of boron- and gallium-induced surface structures on Si(111) during deposition and epitaxial growth of siliconApplied Physics Letters, 1989
- X-ray standing-wave and tunneling-microscope location of gallium atoms on a silicon surfacePhysical Review B, 1989
- Tunneling Images of Gallium on a Silicon Surface: Reconstructions, Superlattices, and IncommensurationPhysical Review Letters, 1988
- Monolayer growth and structure of ga on si(111)Physical Review B, 1988
- Reflection high energy electron diffraction and Auger electron spectroscopic study on B/Si(111) surfacesSurface Science, 1988
- Role of Ostwald ripening in islanding processesApplied Physics Letters, 1987
- Scanning tunneling microscopy—from birth to adolescenceReviews of Modern Physics, 1987
- New Ga-Induced Superstructures on Si(111) SurfacesJapanese Journal of Applied Physics, 1985
- Surface reactions of silicon with aluminum and with indiumSurface Science, 1964