Investigation of implanted gallium depth distributions in ZnSxSe-x by EPMA

This publication has 10 references indexed in Scilit:

• Stimulated emission in ZnS_xSe_{1 − x}/ZnSe heterostructures grown by MOVPE
  Advanced Materials for Optics and Electronics, 1994
• Gain and dynamics of excitons in MOVPE‐grown ZnSe/ZnS_xSe_{1 − x} heterostructures
  Advanced Materials for Optics and Electronics, 1994
• Gallium and nitrogen ion implantation in MOVPE-grown ZnSe/GaAs
  Physica B: Condensed Matter, 1993
• Quantitative Electron Probe Microanalysis of Multi-layer Structures
  Published by Springer Nature ,1992
• Non-Destructive Determination of Ion-Implanted Impurity Distribution in Silicon by EPMA
  Published by Springer Nature ,1992
• Quantitative Analysis of (Y2O3)x (ZrO2)1-x Films on Silicon by EPMA
  Published by Springer Nature ,1992
• Determination of the centroid depths of the depth profiles of ion‐implanted analytes by angle‐resolved electron microbeam analysis
  Surface and Interface Analysis, 1990
• Outdiffusion of Magnesium from Mg + implanted GaAs.
  MRS Proceedings, 1988
• Precise Profiles for Arsenic Implanted in Si and SiO₂ over a Wide Implantation Energy Range (10 keV–2.56 MeV)
  Japanese Journal of Applied Physics, 1982
• The Influence of the Amorphous Phase on Ion Distributions and Annealing Behavior of Group III and Group V Ions Implanted into Silicon
  Journal of the Electrochemical Society, 1971