High detectivity GaInAs-InP quantum-well infrared photodetectors grown on Si substrates
- 7 August 2002
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 14 (3) , 372-374
- https://doi.org/10.1109/68.986817
Abstract
We report an improvement in the growth and the device performance of GaInAs-InP quantum well infrared photodetectors grown on Si substrates. Material growth techniques, like low-temperature nucleation layers and thick buffer layers were used to grow InP on Si. An in situ thermal cycle annealing technique was used to reduce the threading dislocation density in the InP-on-Si. Detector dark current was reduced 2 orders of magnitude by this method. Record high detectivity of 2.3 × 10/sup 9/ cmHz 1 2//W was obtained for QWIP-on-Si detectors in the 7-9 μm range at 77 K.Keywords
This publication has 16 references indexed in Scilit:
- Monolithic integration of GaInAs/InP quantum well infrared photodetectors on Si substratePublished by SPIE-Intl Soc Optical Eng ,2001
- High-responsivity GaInAs/InP quantum well infrared photodetectors grown by low-pressure metalorganic chemical vapor depositionPublished by SPIE-Intl Soc Optical Eng ,2000
- QWIP FPAs for high-performance thermal imagingPhysica E: Low-dimensional Systems and Nanostructures, 2000
- Recent developments and applications of quantum well infrared photodetector focal plane arraysPhysica E: Low-dimensional Systems and Nanostructures, 2000
- Corrugated quantum well infrared photodetectors for normal incident light couplingApplied Physics Letters, 1996
- InP Layer Grown on (001) Silicon Substrate by Epitaxial Lateral OvergrowthJapanese Journal of Applied Physics, 1995
- Comparison of GaAs/AlGaAs quantum-well IR detectors fabricated on GaAs and Si substratesPublished by SPIE-Intl Soc Optical Eng ,1992
- First cw operation of a Ga0.25In0.75As0.5P0.5-InP laser on a silicon substrateApplied Physics Letters, 1988
- Defect reduction effects in GaAs on Si substrates by thermal annealingApplied Physics Letters, 1988
- Quantum well avalanche multiplication initiated by 10 μm intersubband absorption and photoexcited tunnelingApplied Physics Letters, 1987