InP Layer Grown on (001) Silicon Substrate by Epitaxial Lateral Overgrowth

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Abstract
An InP epitaxial layer with a dislocation-free area was obtained for the first time on (001) Si substrate by using the epitaxial lateral overgrowth (ELO) technique. Most etch pits appeared in the region over the seed area on the ELO stripe. This indicates that the SiO2 film between the lateral overgrowth layer and the substrate prevented the propagation of the dislocations from the substrate to the lateral overgrowth layer. Spatially resolved photoluminescence showed that the optical quality of an InP ELO layer grown on Si was almost the same as that of a homoepitaxially grown InP layer and that the ELO technique is also useful to relieve stress caused by both the lattice mismatch and the difference in thermal expansion coefficient.

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