Bias sputtered Ta modified diffusion barrier in Cu/Ta(Vb)/Si(111) structures
- 17 July 2000
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 370 (1-2) , 10-17
- https://doi.org/10.1016/s0040-6090(00)00926-3
Abstract
No abstract availableKeywords
This publication has 28 references indexed in Scilit:
- Cu metallization using a permanent magnet electron cyclotron resonance microwave plasma/sputtering hybrid systemJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Diffusion of copper through dielectric films under bias temperature stressThin Solid Films, 1995
- Copper interconnection integration and reliabilityThin Solid Films, 1995
- Advanced multilayer metallization schemes with copper as interconnection metalThin Solid Films, 1993
- Diffusion barrier properties of TiW between Si and CuJournal of Applied Physics, 1993
- Comparison of high vacuum and ultra-high-vacuum tantalum diffusion barrier performance against copper penetrationJournal of Applied Physics, 1993
- Tantalum as a diffusion barrier between copper and silicon: Failure mechanism and effect of nitrogen additionsJournal of Applied Physics, 1992
- Tantalum-based diffusion barriers in Si/Cu VLSI metallizationsJournal of Applied Physics, 1991
- Ta as a barrier for the Cu/PtSi, Cu/Si, and Al/PtSi structuresJournal of Vacuum Science & Technology A, 1990
- Formation of copper silicides from Cu(100)/Si(100) and Cu(111)/Si(111) structuresJournal of Applied Physics, 1990