Ion-induced electron emission as a means of studying energy- and angle-dependent compositional changes of solids bombarded with reactive ions: I. Oxygen bombardment of silicon

This publication has 55 references indexed in Scilit:

• Transient phenomena and impurity relocation in SIMS depth profiling using oxygen bombardment: pursuing the physics to interpret the data
  Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences, 1996
• Model for the emission ofSi+ions during oxygen bombardment of Si(100) surfaces
  Physical Review B, 1994
• 18O studies of altered layers formed in Si and SiO2 by ion bombardment
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1994
• Comparative study of low energy ion beam oxidation of Si(100), Ge/Si(100) and Si1−xGex/Si(100)
  Materials Science and Engineering: B, 1992
• Charged and excited states of sputtered atoms
  Published by Springer Nature ,1991
• In situ secondary ion mass spectrometry study of the surface oxidation of silicon using 18O tracer
  Journal of Applied Physics, 1988
• Growth mechanism of thin oxide films under low-energy oxygen-ion bombardment
  Journal of Vacuum Science & Technology B, 1988
• A SIMS-XPS study on silicon and germanium under O+2 bombardment
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
• An AES-SIMS study of silicon oxidation induced by ion or electron bombardment
  Applications of Surface Science, 1980
• Pre-equilibrium variation of the secondary ion yield
  International Journal of Mass Spectrometry and Ion Physics, 1975