MBE growth and properties of monolayer and submonolayer InAs layer embedded in GaAs/AlAs quantum wells
- 2 February 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 127 (1-4) , 783-787
- https://doi.org/10.1016/0022-0248(93)90732-c
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 5 references indexed in Scilit:
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- Structural and optical properties of (100) InAs single-monolayer quantum wells in bulklike GaAs grown by molecular-beam epitaxyPhysical Review B, 1990
- Anisotropic transport and nonparabolic miniband in a novel in-plane superlattice consisting of a grid-inserted selectively doped heterojunctionApplied Physics Letters, 1989
- InAs monomolecular plane in GaAs grown by flow-rate modulation epitaxyJournal of Applied Physics, 1989
- Interface roughness scattering in GaAs/AlAs quantum wellsApplied Physics Letters, 1987