Selective Epitaxial Growth of Si and Si1-xGex Films by Ultrahigh-Vacuum Chemical Vapor Deposition Using Si2H6 and GeH4
- 1 May 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (5R)
- https://doi.org/10.1143/jjap.31.1432
Abstract
Aiming at the precise profile control of Si1-x Ge x , selective epitaxial growth (SEG) conditions and Si1-x Ge x growth were investigated by ultrahigh-vacuum chemical vapor deposition (UHV-CVD) using Si2H6 and GeH4. As long as the total amount of Si2H6 did not exceed the critical amount, Si- and Si1-x Ge x -SEG were both achieved independent of source gas flow rate and substrate temperature. The Ge fraction x of Si1-x Ge x could be decided by the flow rate ratio between Si2H6 and GeH4, independent of substrate temperature. Fast gas flow switching realized the formation of a Si(120 Å)/Si1-x Ge x (69 Å) strained layer superlattice at 587°C.Keywords
This publication has 9 references indexed in Scilit:
- Low-temperature selective epitaxy by ultrahigh-vacuum chemical vapor deposition from SiH4 and GeH4/H2Applied Physics Letters, 1991
- Limitations of selective epitaxial growth conditions in gas-source MBE using Si2H6Journal of Crystal Growth, 1991
- Selective heteroepitaxial growth of Si1−xGex using gas source molecular beam epitaxyApplied Physics Letters, 1990
- Kinetics of silicon epitaxy using SiH4 in a rapid thermal chemical vapor deposition reactorApplied Physics Letters, 1990
- Selective silicon epitaxial growth at 800 °C by ultralow-pressure chemical vapor deposition using SiH4 and SiH4/H2Journal of Applied Physics, 1989
- Cooperative growth phenomena in silicon/germanium low-temperature epitaxyApplied Physics Letters, 1988
- Selective growth condition in disilane gas source silicon molecular beam epitaxyApplied Physics Letters, 1988
- Gas source silicon molecular beam epitaxy using disilaneApplied Physics Letters, 1988
- Selective Silicon Epitaxy Using Reduced Pressure TechniqueJapanese Journal of Applied Physics, 1982