Reversible photoinduced modification of electron-capture cross section at localized states in a-Si:H

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Abstract
A reversible photoinduced modification of the electron‐capture cross section at localized states in P‐doped a‐Si:H has been directly observed, being associated with the Staebler–Wronski effect. Isothermal capacitance transient spectroscopy measurement shows that the electron‐capture cross section at the gap states located at around 0.5 eV below the conduction‐band mobility edge (Ec) increases after the band‐gap illumination and is nearly restored to its original value by thermal annealing below 200 °C. It has been suggested that a metastable state related with the dangling bond is created through the multiphonon emission when excess carriers recombine.