Heteroepitaxial Growth of GaAs Films on CaF2/Si(511) Structures Prepared with Rapid Thermal Annealing
- 1 October 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (10R)
- https://doi.org/10.1143/jjap.28.1784
Abstract
Heteroepitaxial growth of CaF2 films on (511)Si and GaAs films on CaF2 /Si(511) structures is investigated. CaF2 films and GaAs films are grown by vacuum evaporation and molecular beam epitaxy, respectively. Ion channeling measurements and replica transmission electron microscopy show that CaF2 films having good crystalline quality and surface steps can be formed by annealing at 900°C for 30 s after the growth at 550°C. GaAs films having smooth surfaces and good crystalline quality can be grown on the annealed CaF2/Si(511) structures. Differences in crystalline defects between GaAs films grown on (511) substrates and those on (100) substrates are discussed based on results obtained from cross-sectional transmission electron microscopy.Keywords
This publication has 7 references indexed in Scilit:
- Growth of single domain GaAs/fluoride/Si structuresJournal of Crystal Growth, 1989
- Electron-Beam Exposure(EBE) and Epitaxy of GaAs Films on CaF2/Si StructuresJapanese Journal of Applied Physics, 1988
- Flattening the Surface of CaF2/Si(100) Structures by Post-Growth AnnealingJapanese Journal of Applied Physics, 1988
- A Novel Electron-Beam Exposure Epitaxy for Growing GaAs Films on Fluoride/Si StructuresJapanese Journal of Applied Physics, 1987
- Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substratesApplied Physics Letters, 1987
- Formation of GaAs-on-Insulator Structures on Si Substrates by Heteroepitaxial Growth of CaF2 and GaAsJapanese Journal of Applied Physics, 1986
- Use of a rapid anneal to improve CaF2:Si (100) epitaxyApplied Physics Letters, 1985