p-n junction formation by laser annealing of ion-implanted silicon
- 16 January 1980
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 57 (1) , 263-267
- https://doi.org/10.1002/pssa.2210570129
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Electron-beam annealing of ion-implantation damage in integrated-circuit devicesJournal of Applied Physics, 1979
- Use of a scanning cw Kr laser to obtain diffusion-free annealing of B-implanted siliconApplied Physics Letters, 1978
- p-n junction formation in boron-deposited silicon by laser-induced diffusionApplied Physics Letters, 1978
- Laser-beam annealing of heavily damaged implanted layers on siliconApplied Physics Letters, 1978
- Laser annealing of diffusion-induced imperfections in siliconApplied Physics Letters, 1978
- Physical and electrical properties of laser-annealed ion-implanted siliconApplied Physics Letters, 1978
- Laser annealing of boron-implanted siliconApplied Physics Letters, 1978
- A theoretical and experimental study of recombination in silicon p−n junctionsSolid-State Electronics, 1975
- Carrier Generation and Recombination in P-N Junctions and P-N Junction CharacteristicsProceedings of the IRE, 1957