Reduction of dislocations in GaAs and InP epitaxial layers by quasi ternary growth and its effect on device performance
- 1 July 1986
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 15 (4) , 247-250
- https://doi.org/10.1007/bf02659638
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Enhanced carrier lifetime and diffusion length in GaAs by strained-layer MOCVDIEEE Electron Device Letters, 1986
- Minority carrier lifetime improvement by single strained layer epitaxy of InPIEEE Electron Device Letters, 1986
- A low dark current, large bandwidth Mott-barrier photodetector fabricated by quasi-ternary growth of GaAsIEEE Electron Device Letters, 1986
- Defect reduction in GaAs epitaxial layers using a GaAsP-InGaAs strained-layer superlatticeApplied Physics Letters, 1985
- Advances in LEC growth of InP crystalsJournal of Electronic Materials, 1984