Processes of quantum dot formation in the InAs on GaAs(001) system: A reflectance anisotropy spectroscopy study
- 1 July 1998
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 16 (4) , 2358-2366
- https://doi.org/10.1116/1.590175
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- On the development of InAs on GaAs(001) as measured by reflectance anisotropy spectroscopy: continuous and islanded filmsApplied Surface Science, 1998
- A Scanning Tunneling Microscopy-Reflection High Energy Electron Diffraction-Rate Equation Study of the Molecular Beam Epitaxial Growth of InAs on GaAs(001), (110) and (111)A–Quantum Dots and Two-Dimensional ModesJapanese Journal of Applied Physics, 1997
- Stranski-Krastanov formation of InAs quantum dots monitored during growth by reflectance anisotropy spectroscopy and spectroscopic ellipsometryJournal of Crystal Growth, 1997
- In situ monitoring of InAs-on-GaAs quantum dot formation in MOVPE by reflectance-anisotropy-spectroscopy and ellipsometryApplied Surface Science, 1996
- In situ characterization of ZnSe/GaAs(100) interfaces by reflectance difference spectroscopyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Growth of InGaAs/GaAs heterostructures with abrupt interfaces on the monolayer scaleJournal of Crystal Growth, 1995
- Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAsPhysical Review Letters, 1994
- Formation and morphology of InAs/GaAs heterointerfacesPhysical Review B, 1992
- First stages of the MBE growth of InAs on (001)GaAsJournal of Crystal Growth, 1987
- On the practical applications of MBE surface phase diagramsJournal of Crystal Growth, 1987