Chemically controlled deep level formation and band bending at metal-CdTe interfaces
- 31 October 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (18) , 1723-1725
- https://doi.org/10.1063/1.99806
Abstract
We have used reactive metal interlayers to suppress anion outdiffusion at Au-CdTe junctions and thereby to alter the formation of deep interfacial states. Using soft x-ray photoemission and luminescence spectroscopies, we report a dramatically reduced p-type band bending and demonstrate that deep levels observed directly at the interface are responsible for the chemically induced electrical behavior.Keywords
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