Effect of Extrinsic Electric Fields upon Dielectronic Recombination:Mg1+

Recently, large discrepancies have appeared between theoretical predictions and experimental measurements of dielectronic recombination cross sections (${\sigma }^{\mathrm{DR}}$) for ${\mathrm{Mg}}^{1+}$ targets. This disagreement has provoked new work aimed at understanding, more fully, the effect of applied fields upon the process. This Letter reports calculations of ${\sigma }^{\mathrm{DR}}$ for ${\mathrm{Mg}}^{1+}$ in a small applied electric field. The field effect is large enough to bring the experimental ${\sigma }^{\mathrm{DR}}$ into much closer agreement with the theory.