Characterisation of CdTe/GaAs heterojunctions with photovoltage measurements
- 1 September 1986
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 1 (3) , 226-229
- https://doi.org/10.1088/0268-1242/1/3/011
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Growth of CdTe on GaAs by organometallic vapor phase heteroepitaxyApplied Physics Letters, 1985
- Epitaxial growth of (100)CdTe on (100)GaAs induced by pulsed laser evaporationApplied Physics Letters, 1985
- Hg1−xCdxTe-Hg1−yCdyTe (0≤x, y≤1) heterostructures: Properties, epitaxy, and applicationsJournal of Applied Physics, 1985
- Growth of CdTe on InSb by organometallic vapor phase epitaxyApplied Physics Letters, 1984
- Metalorganic vapor deposition of CdTe and HgCdTe epitaxial films on InSb and GaAs substratesApplied Physics Letters, 1984
- Advantages of the HgTe-CdTe superlattice as an infrared detector materialApplied Physics Letters, 1983
- Growth of CdTe films on sapphire by molecular beam epitaxyApplied Physics Letters, 1983
- The properties and applications of the Hg1−xCdxTe alloy systemPublished by Springer Nature ,1983
- Organometallic growth of II–VI compoundsJournal of Crystal Growth, 1981
- Temperature dependance of the fundamental absorption edge in CdTeSolid State Communications, 1973