Oxygen precipitation and denuded zone characterization with the electrolytical metal tracer technique
- 15 July 1997
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 82 (2) , 595-600
- https://doi.org/10.1063/1.365586
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
- Oxygen precipitation in siliconJournal of Applied Physics, 1995
- Ring-distribution of oxygen precipitates in Czochralski silicon revealed by low-temperature infrared absorption spectroscopyApplied Physics Letters, 1993
- Reduction of iron solubility in silicon with oxygen precipitatesApplied Physics Letters, 1986
- Oxygen Precipitation in SiliconMRS Proceedings, 1985
- Oxygen Precipitation Factors in SiliconJournal of the Electrochemical Society, 1982
- Octahedral precipitates in high temperature annealed Czochralski-grown siliconJournal of Crystal Growth, 1981
- Intrinsic gettering by oxide precipitate induced dislocations in Czochralski SiApplied Physics Letters, 1977
- A model for the formation of stacking faults in siliconApplied Physics Letters, 1977
- Oxygen precipitation and the generation of dislocations in siliconPhilosophical Magazine, 1976
- Characterization of structural defects in annealed silicon containing oxygenJournal of Applied Physics, 1976